Bias-dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers
نویسندگان
چکیده
منابع مشابه
Low-resistance spin injection into silicon using graphene tunnel barriers.
Spin manipulation in a semiconductor offers a new paradigm for device operation beyond Moore's law. Ferromagnetic metals are ideal contacts for spin injection and detection, but the intervening tunnel barrier required to accommodate the large difference in conductivity introduces defects, trapped charge and material interdiffusion, which severely compromise performance. Here, we show that singl...
متن کاملSpin-injection device based on EuS magnetic tunnel barriers
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website. • The final author version ...
متن کاملEnhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D mater...
متن کاملElectrical spin injection and detection in silicon nanowires through oxide tunnel barriers.
We demonstrate all-electrical spin injection, transport, and detection in heavily n-type-doped Si nanowires using ferromagnetic Co/Al(2)O(3) tunnel barrier contacts. Analysis of both local and nonlocal spin valve signals at 4 K on the same nanowire device using a standard spin-transport model suggests that high spin injection efficiency (up to ~30%) and long spin diffusion lengths (up to ~6 μm)...
متن کاملEvidence for electrical spin tunnel injection into silicon
Electrical spin injection into silicon was studied in a ferromagnet/insulator/silicon/insulator/ ferromagnet structure, where the insulator is Si3N4. Si3N4 barriers conduct by hopping conduction at low voltages, but switch to Fowler-Nordheim tunneling at high voltages. In the Fowler-Nordheim tunneling regime a magnetic field dependence of the output current consistent with spin dependent transp...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2018
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.98.125422